FFA60UP30DN Rev. A
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FFA60UP30DN Ultrafast Recovery Power RectifierElectrical Characteristics (per diode) T = 25°C unless otherwise noted
a
SymbolVFM *IRM *trrtatbQrrWAVL
IF = 30AIF = 30AVR = 300VVR = 300V
Parameter
TC = 25 °CTC = 150 °CTC = 25 °CTC = 150 °CTC = 25 °CTC = 25 °CTC = 25 °CTC = 25 °CTC = 25 °C
Min.---------20
Typ.------171550-
Max.1.51.31005004555----
UnitsVVµAµAnsnsnsnsnCmJ
IF =1A, di/dt = 100A/µs, VCC = 30V IF =30A, di/dt = 200A/µs, VCC = 195V IF =30A, di/dt = 200A/µs, VCC = 195V
Avalanche Energy (L = 20mH)
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
FFA60UP30DN Rev. A
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FFA60UP30DN Ultrafast Recovery Power RectifierTypical Performance CharacteristicsFigure 1. Typical Forward Voltage Drop100Figure 2. Typical Reverse Current100TC = 100CTC = 25C10oReverse Current, IR [µA]Forward Current, IF [A]o10TC = 100C1o1TC = 25C0.1o0.10.00.51.01.52.02.53.03.50.01050100150200250300350Forward Voltage, VF [V]Reverse Voltage, VR [V]Figure 3. Typical Junction Capacitance1000Figure 4. Typical Reverse Recovery Time70Reverse Recovery Time, trr [ns]60Capacitance, CJ [pF]50100TC = 100C40o30TC = 25C20100o100.1110100200300400500Reverse Voltage, VR [V]di / dt [A/µs]Figure 5. Typical Reverse Recovery Current12Figure 6. Forward Current Deration CurveAverage Rectified Forward Current, IF(AV) [A]4035302520151050125Reverse Recovery Current, Irr [A]108TC = 100C6oDC4TC = 25C2o0100200300400500130135140o145150di / dt [A/µs]Case Temperature, Tc [C]FFA60UP30DN Rev. A
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FFA60UP30DN Ultrafast Recovery Power RectifierMechanical Dimensions
TO-3PN
Dimensions in Millimeters
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Definition
This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.
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Rev. I16
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