CESD7V0D5

SOD-523 Plastic-Encapsulate Diodes SOD-523 CESD7V0D5 ESD Protection Diode

+ DESCRIPTION

The CESD7V0D5 is designed to protect voltage sensitive

components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that

are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space is at a premium.

FEATURES

z Stand−off Voltage: 7 V z Low Leakage

z Response Time is Typically < 1 ns

z ESD Rating of Class 3 (> 16 kV) per Human Body Model z IEC61000−4−2 Level 4 ESD Protection z These are Pb−Free Devices

Maximum Ratings @Ta=25℃

Parameter

ir modelIEC61000−4−2(ESD) A

Contact model

ESD Voltage Per Human Body Model Per Machine Model

Symbol

Limit ±30 ±30 16 400

Unit kV kV V

Total Power Dissipation on FR-5 Board (Note 1) PD 150 mW Thermal Resistance Junction−to−Ambient RΘJA Lead Solder Temperature − Maximum (10 Second Duration)

TL

833 260

℃/W℃

Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 ℃

Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended. Operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. Note 1. FR−5 = 1.0 x 0.75 x 0.62 in.

C,Mar,2013

【领先的片式无源器件整合供应商—南京南山半导体有限公司】www.nscn.com.cn

ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted)

Symbol

IPP VC VRWM IR VBR

Parameter

Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT

IT Test Current IF Forward Current VF Ppk C

ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10mA for all types)

Device Marking

Max

CESD7V0D5

VRWM (V)

IR (μA) @ VRWM Max

VBR (V) @ IT(Note 2) Min

Max

VC

IT

@IPP+ = 5 A

mA

V

Max IPP(A) +

VC (V) @Max

IPP

+

Forward Voltage @ IF Peak Power Dissipation

Max. Capacitance @VR=0 and f =1MHz

Device*

Ppk + (W)C (pF)

Max

Max Typ

ZH 7.0 0.03 7.5 8.71.013.5 8.8 22.7 200 65 *Other voltages available upon request.

+Surge current waveform reference to 8/20μs waveform.

Note 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.

C,Mar,2013

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