NPN EPITAXIAL SILICONTRANSISTOR HIGH FREQUENCYLOW DISTORTION AMPLIFIERFEATURES
••••
HIGH COLLECTOR CURRENT:250 mA MAX
NEW HIGH GAIN POWER MINI-MOLD PACKAGE(SOT-89 TYPE)
HIGH OUTPUT POWER AT 1 dB COMPRESSION:27 dBm TYP at 1 GHzHIGH IP3:
37 dBm TYP at 1 GHz
NE461M02OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M02
BOTTOM VIEW
4.5±0.11.6±0.21.5±0.1DESCRIPTION
The NE461M02 is an NPN silicon epitaxial bipolar transistordesigned for medium power applications requiring high dy-namic range and low intermodulation distortion. This deviceoffers excellent performance and reliability at low cost throughNEC's titanium, platinum, gold metallization system and directnitride passivation of the surface of the chip. The NE461M02is an excellent choice for low noise amplifiers in the VHF to UHFband and is suitable for CATV and other telecommunicationapplications.
0.8MIN0.42±0.06EBE0.42±0.061.53.00.45±0.063.95±0.26C2.45±0.10.25±0.02PIN CONNECTIONSE: EmitterC:CollectorB:Base
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
ICBOIEBOhFE2|S21E|2NF1NF2IM2
PARAMETERS AND CONDITIONS
Collector Cutoff Current at VCB = 20 V, IE = 0Emitter Cutoff Current at VEB = 2 V, IC = 0DC Current Gain at VCE = 10 V, IC = 50 mA
Insertion Power Gain at VCE = 10 V, IC = 50 mA, f = 1 GHzNoise Figure 1 at VCE = 10 V, IC = 50 mA, f = 500 MHz3Noise Figure 2 at VCE = 10 V, IC = 50 mA, f = 1 GHz32nd Order Intermodulation DistortionVCE = 10 V, IC = 50 mA, Rs = RL = 75 ΩPin = 105 dB µV/75 Ω, f1 = 190 MHzf2 = 90 MHz, f = f1 - f2
3rd Order Intermodulation DistortionVCE = 10 V, IC = 50 mA, Rs = RL = 75 ΩPin = 105 dB µV/75 Ω, f1 = 190 MHzf2 = 200 MHz, f = 2 x f1 - f2
dBdBdBdBUNITSµAµA
407.0MIN
NE461M022SC5337M02
TYP0.010.031208.31.52.059.0
3.53.5MAX5.05.0200
IM3dB82.0
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.3. Rs = RL = 50 Ω, tuned.
California Eastern Laboratories
元器件交易网www.cecb2b.com
NE461M02
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLSPARAMETERSUNITSRATINGS
VCBOCollector to Base VoltageV30VCEOCollector to Emitter VoltageV15VEBOEmitter to Base VoltageV3.0ICCollector CurrentmA250PTTotal Power Dissipation2W2.0TJJunction Temperature°C150TSTG
Storage Temperature
°C
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may resultin permanent damage.
2. Device mounted on 0.7 mm x 16 cm2 double-sided ceramicsubstrate (copper plating).
TYPICAL PERFORMANCE CURVES (TA = 25°C)
COLLECTOR CURRENT VS.
COLLECTOR TO EMITTER VOLTAGE
100IB=0.6 mA)0.5 mAAm( 80C0.4 mAI ,tnerr60u0.3 mAC rot40ecll0.2 mAoC200.1 mA01020Collector to Emitter Voltage, VCE (V)GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10)zVCE = 10 VHf = 1 GHzG( 5Tf ,tuc3dor2P htdiw1dnaB n0.5iaG0.310305070100 Collector Current, Ic (mA)ORDERING INFORMATION
PART NUMBERQUANTITYPACKAGINGNE461M02-T1
1000
Tape & Reel
DC CURRENT GAIN VS.COLLECTOR CURRENT
300
VCE 10 V
EFh ,n100
iaG tne50
rruC CD10
0.11101001000
Collector Current, Ic (mA)
FEEDBACK CAPACITANCE vs.COLLECTOR TO BASE VOLTAGE
5.0
f = 1.0 MHz)F3.0p( rEC2.0
,ecnatic1.0
apaC kc0.5
abdee0.3
F135102030
Collector to Base Voltage, VCB (V)
元器件交易网www.cecb2b.com
TYPICAL PERFORMANCE CURVES (TA = 25°C)
INSERTION POWER GAIN vs.COLLECTOR CURRENT
)VCE = 10 VBdf = 1 GHz( 2|10E12IS ,niaG rewo5P noitresnI010305070100Collector Current, Ic (mA)NOISE FIGURE vs.COLLECTOR CURRENT
7
VCE = 10 Vf = 1 GHz
6
)Bd(5 FN ,e4rugiF3 esioN21
0
5
10
20
50
100
Collector Current, Ic (mA)NE461M02
INSERTION POWER GAIN and MAXIMUMAVAILABLE GAIN vs. FREQUENCY
)|S21E|2B)dB(d 2(| E1GMAGAS2M20I , ,ninaiaGG el rbealwiaovPA10 nmouitmriexansMIVCE = 10 VIC = 50 MA00.20.40.60.81.01.42.0Frequency, f (GHz)
3RD ORDER INTERMODULATION DISTORTION2ND ORDER INTERMODULATION DISTORTION (+) &2ND ORDER INTERMODULATION DISTORTION (-) vs.
)c)COLLECTOR CURRENT
BcdB80
(d (IM3
3+ -M22MI I70
,,nnooiittrroottssi60
iDD IM2+nnooiittIM2-aalluu50
ddoommIM3: Vo = 110 dB µV/75 Ω 2 tone eachrreettnn40
f = 2 x 190 MHz - 200 Mhz
IIIM2+: Vo = 105 dB µV/75 Ω 2 tone each
rreef = 90 MHz + 100 MHz
ddrrVCE=10 V
IM2-: Vo 105 dB µV/75 Ω 2 tone each
OO 30
f = 190 MHz - 90 MHz
ddnn10
50
100
300
22Collector Current, IC (mA)
3rd Order Intermodulation Distortion, IM (dBc)元器件交易网www.cecb2b.com
NE461M02
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50j25j10090˚120˚60˚150˚j10S223 GHzS113 GHz0S210.1 GHzS213 GHzS120.1 GHzS123 GHz30˚0180˚0˚-j10S110.1 GHz-j25-j50S220.1 GHz-j100Coordinates in OhmsFrequency in GHzVCE = 10 V, IC = 50 mA
-150˚-30˚-120˚-90˚-60˚NE461M02
VCE = 5 V, IC = 50 mA
FREQUENCY
GHz0.1000.2000.4000.6000.8001.000 1.2001.4001.6001.8002.0002.2002.4002.6002.8003.000
MAG 0.6030.6150.6180.6160.6120.6070.602 0.5960.5880.581 0.5720.5630.5530.5440.5350.527
S11
ANG-142.0-165.0178.5168.9161.2154.4148.0142.0136.2130.6125.0119.6114.0108.4102.797.0
MAG22.35111.847 6.0434.0723.0892.5062.1231.8581.6611.5141.3971.3071.2321.1691.1181.074
S21
ANG109.295.283.275.168.261.855.850.244.9 39.835.1 30.325.921.617.513.4
MAG0.0310.0420.066 0.0920.119 0.1460.1720.1980.2240.2500.2750.3000.3250.3490.3730.396
S12
ANG47.352.460.863.463.462.260.458.255.953.350.6 47.844.941.938.8 35.6
MAG0.4560.3450.3090.3070.3100.3150.3210.328 0.3350.3410.3470.3530.3590.3630.3690.373
S22
ANG-100.7-129.0-147.0 -152.1-153.5-153.6 -153.3-152.8 -152.2-151.7 -151.5-151.4-151.4-151.8-152.4-153.3
0.500.770.971.041.061.071.071.061.061.051.041.031.021.011.001.00K
MAG1(dB)28.624.519.615.312.710.89.38.27.36.55.95.45.04.64.54.3
VCE = 10 V, IC = 50 mA
FREQUENCY
GHz0.1000.2000.4000.6000.8001.0001.2001.4001.600 1.8002.0002.2002.4002.6002.8003.000
MAG0.5990.602 0.6010.5990.5960.591 0.5860.5810.5730.5660.5570.5490.5400.5310.5230.515
S11
ANG-137.2-162.2179.8169.8161.9155.0148.5142.4136.6131.0125.5120.1114.5108.9103.297.5
MAG23.21012.3536.3074.2483.220 2.6092.2081.9291.7221.5681.4441.3491.2691.2021.1481.101
S21
ANG109.995.783.575.468.4 62.156.150.545.2 40.135.330.526.121.817.613.5
MAG0.0310.0420.0660.0910.1170.1440.1690.1950.2200.245 0.2700.2950.319 0.3420.3660.388
S12
ANG48.051.460.062.863.061.960.2 58.155.853.350.748.045.142.239.136.0
MAG0.4550.3350.2950.2920.2950.3010.3090.3170.3250.3330.3400.3470.3540.3600.3660.372
S22
ANG -97.0-125.3-143.9-149.2-150.6-150.7-150.3 -149.7-149.1 -148.6-148.3-148.2 -148.2-148.6 -149.2-150.1
0.480.750.971.031.061.071.071.061.061.051.041.031.021.011.000.99K
MAG1(dB)28.724.719.815.612.911.09.68.47.56.76.15.65.24.84.84.5
Note:
1.Gain Calculations:
MAG =|S21||S12|(K ± 222222|K - 1 ). When K ≤ 1, MAG is undefined and MSG values are used.MSG =|S21|, K =1 + | ∆ | - |S11| - |S, ∆ = S11 S22 - S21 S12|S12|2 |S12 S21|MAG = Maximum Available Gain
MSG = Maximum Stable Gain
元器件交易网www.cecb2b.com
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50j25j100NE461M02
90˚120˚S210.1 GHz60˚150˚j10S223 GHz0S113 GHz030˚180˚0˚-j10S110.1 GHzS220.1 GHz-j25-j50-j100Coordinates in OhmsFrequency in GHzVCE = 12 V, IC = 100 mA
-150˚S213 GHzS123 GHzS120.1 GHz-30˚-120˚-90˚-60˚NE461M02
VCE = 10 V, IC = 100 mA
FREQUENCY
GHz0.1000.2000.4000.600 0.8001.0001.200 1.4001.6001.8002.0002.2002.4002.6002.800 3.000
MAG0.5960.6010.6010.6000.5970.593 0.5880.5810.5740.5650.5560.547 0.5350.524 0.5150.505
S11
ANG-144.8-166.5177.5168.1160.4153.6147.2141.2135.3129.6124.1118.7 113.0107.5101.896.1
MAG23.95912.5756.3864.2963.2582.6402.2361.9531.7471.5901.4681.3711.2921.2251.1701.122
S21
ANG106.793.982.775.0 68.362.156.350.845.640.635.8 31.126.6 22.318.114.1
MAG0.0290.0400.0660.093 0.1200.1470.1740.2010.2270.2520.2770.3020.3250.348 0.3710.393
S12
ANG 48.5 55.663.665.364.7 63.1 60.958.555.953.1 50.347.4 44.3 41.3 38.235.1
MAG 0.4220.3340.3080.3060.3090.3130.3180.3240.330 0.3350.3410.3460.3510.3550.3590.363
S22
ANG-108.4 -135.7-152.0 -156.5-157.7-157.8-157.4-156.6-155.7 -154.9-154.2 -153.5 -153.0-152.8-152.8 -153.0
0.560.820.991.041.061.061.061.061.051.051.041.031.021.021.011.00K
MAG1(dB)29.225.019.915.412.911.09.58.47.56.76.15.55.14.74.44.2
VCE = 12 V, IC = 100 mA
FREQUENCY
GHz0.1000.2000.4000.6000.8001.0001.2001.4001.6001.8002.000 2.2002.4002.600 2.800 3.000
MAG0.5960.5980.5970.595 0.5920.5880.5830.5760.5680.5600.5500.5400.530 0.5200.5100.502
S11
ANG-143.1 -165.5178.0168.4160.6153.7147.3141.3135.5129.9124.4119.0113.5107.9102.396.7
MAG24.06112.6406.4174.3133.2682.6472.2411.9571.7501.5931.4711.3731.294 1.2281.172 1.123
S21
ANG106.9 94.082.774.9 68.262.0 56.250.7 45.540.5 35.6 31.026.422.117.913.8
MAG0.0290.040 0.0650.0930.1200.147 0.1730.1990.2250.2500.2750.3000.3230.3460.3690.391
S12
ANG 48.3 55.163.0 64.864.362.8 60.758.355.853.150.247.444.3 41.338.235.0
MAG0.4160.328 0.3010.2990.3020.3060.3120.3180.3240.3300.3360.3420.3470.3530.3570.362
S22ANG-107.7 -135.1-151.6 -156.2 -157.4 -157.4 -156.9-156.1 -155.2-154.3 -153.5 -152.8 -152.3-152.0-151.9-152.2
K0.560.820.991.041.061.071.071.071.061.051.041.031.031.021.011.01
MAG1(dB)29.325.019.915.412.811.09.58.37.46.66.05.55.04.64.44.1
Note:
1.Gain Calculations:
MAG =|S21||S12|(K ± 222222|K - 1 ). When K ≤ 1, MAG is undefined and MSG values are used.MSG =|S21|, K =1 + | ∆ | - |S11| - |S, ∆ = S11 S22 - S21 S12|S12|2 |S12 S21|MAG = Maximum Available Gain
MSG = Maximum Stable Gain
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-027924-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -12/98DATA SUBJECT TO CHANGE WITHOUT NOTICE
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