Circuit arrangement with at least four transistors

专利名称：Circuit arrangement with at least four

transistors, and method for the manufacturethereof

发明人：Thomas Schulz,Thomas Aeugle,Wolfgang

Roesner,Lothar Risch

申请号：US09/138160申请日：19980821公开号：US06060911A公开日：20000509

摘要：In the circuit arrangement two of the four vertical transistors are

complementary to the remaining two transistors. Two of the transistors are respectivelyarranged at the same level. For this purpose, layer structures (St1, St2, St3, St4) arestructured that respectively have at least a channel layer and a source/drain region ofone of the transistors. All the layer structures (St1, St2, St3, St4) can be produced from alayer sequence with only four layers. In order to avoid leakage currents due to a parasiticbipolar transistor, the layer structures (St1, St2, St3, St4) can be realized very thinly, usingspacer- type masks. Electrical connections between parts of the four transistors can takeplace via layers of the layer sequence. The contacting to the output voltage terminal cantake place via a step that is formed by two layers of the layer sequence.

申请人：SIEMENS AKTIENGESELLSCHAFT

代理机构：Hill & Simpson

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